Amashanyarazi yashyizwe mu bubiko (ED)urupapuro rw'umuringani inkingi itagaragara y'ibikoresho by'ikoranabuhanga bigezweho. Imiterere yabyo yoroshye cyane, ubushobozi bworoshye bwo gukora, hamwe n'ubushobozi bwo gutwara ibintu mu buryo bwiza bituma biba ingenzi muri bateri za lithium, PCB, na electronics zoroshye.agapapuro k'umuringa kazinze, ishingiye ku guhindura imikorere y'imashini,urupapuro rw'umuringa rwa EDikorwa hakoreshejwe uburyo bwa elegitoroniki bwo kubikamo ibintu, bigatuma habaho kugenzura urwego rwa atome no guhindura imikorere. Iyi nkuru igaragaza uburyo ikorwa neza n'uburyo udushya mu mikorere duhindura inganda.
I. Umusaruro Usanzwe: Ubuhanga mu by'ubuhanga mu by'amashanyarazi
1. Gutegura Electrolyte: Formula ya Nano-Optimized
Electrolyte y'ibanze igizwe na sulfate y'umuringa ifite ubuziranenge bwinshi (80–120g/L Cu²⁺) na aside sulfurike (80–150g/L H₂SO₄), hamwe na gelatin na thiourea byongewe ku rugero rwa ppm. Sisitemu za DCS zigezweho zicunga ubushyuhe (45–55°C), umuvuduko w'amazi (10–15 m³/h), na pH (0.8–1.5) mu buryo bunonosoye. Inyongera zinjira muri cathode kugira ngo ziyobore ikorwa ry'ibinyampeke byo mu rwego rwa nano kandi zikumire inenge.
2. Gushyiramo foil: Uburyo bwo gukora neza bwa atomike
Mu turemangingo twa electrolytic dufite imigozi ya titanium cathode (Ra ≤ 0.1μm) na anode za lead alloy, 3000–5000 A/m² DC current ituma umuringa ushyirwa kuri cathode mu cyerekezo cya (220). Ubunini bwa foil (6–70μm) butunganywa neza binyuze mu muvuduko wa roll (5–20 m/min) no guhindura current, bigatuma ubunini bwa ± 3%. Foil yoroshye cyane ishobora kugera kuri 4μm—1/20 cy'ubunini bw'umusatsi w'umuntu.
3. Gukaraba: Ahantu hasukuye cyane hakoreshejwe amazi meza
Uburyo bwo koza bugizwe n'ibice bitatu bukuraho ibisigazwa byose: Icyiciro cya 1 gikoresha amazi meza (≤5μS/cm), Icyiciro cya 2 gikoresha imiraba ya ultrasonic (40kHz) kugira ngo gikureho ibisigazwa by'ibinyabuzima, naho Icyiciro cya 3 gikoresha umwuka ushyushye (80–100°C) kugira ngo humuke nta kizinga. Ibi bivamourupapuro rw'umuringahamwe n'urugero rwa ogisijeni <100ppm n'ibisigazwa bya sulfur <0.5μg/cm².
4. Gukata no gupakira: Kugera kuri Micron ya nyuma
Imashini zigabanya umuvuduko mwinshi zifite uburyo bwa laser bwo kugenzura impande zituma ubugari bushobora kwihanganira muri ± 0.05mm. Ipaki irinda ogisijeni irimo ibimenyetso by'ubushuhe ibungabunga ubuziranenge bw'ubuso mu gihe cyo gutwara no kubika.
II. Guhindura Uburyo bwo Gutunganya Ubuso: Gufungura Imikorere Yihariye mu Nganda
1. Uburyo bwo kuvura uburyaryate: Gufata neza uruhu kugira ngo rwongere ubufatanye
Uburyo bwo kuvura uduheri:Gushyiramo impumuro mu gisubizo cya CuSO₄-H₂SO₄-As₂O₃ bitanga utudomo twa 2–5μm ku buso bwa foil, bikongera imbaraga zo gufatana kugeza kuri 1.8–2.5N/mm—ni byiza cyane ku mbaho za 5G.
Guteranya Ingano Ibiri:Uduce duto tw'umuringa two mu bwoko bwa micro-na nano-scale twongera ubuso bwa 300%, bikongera uburyo bwo gufatana kw'urutare muri anode za bateri ya lithium ku kigero cya 40%.
2. Gushyiramo ibikoresho: Intwaro y'uburemere bw'ibinyabutabire kugira ngo irambe
Igipfunyika cya Zinc/Tin:Urukuta rw'icyuma rufite uburebure bwa 0.1–0.3μm rwongera ubushobozi bwo kwirinda gusukura umunyu kuva ku masaha 4 kugeza kuri 240, bigatuma biba ikintu cyo gukoresha mu gupima bateri za EV.
Igipfunyika cya Nickel-Cobalt Alloy:Uduce duto tw’udupira duto (≤50nm) tugira ubukana bwa HV350, dushyigikira substrates zishobora gupfunyika kuri telefoni zigendanwa.
3. Ubudahangarwa bw'ubushyuhe bwinshi: Kurokoka ibihe bikomeye
Sol-gel SiO₂-Al₂O₃ coatings (100–200nm) ifasha foil kurwanya oxidation kuri 400°C (oxidation <1mg/cm²), bigatuma ihura neza na sisitemu z'insinga z'indege.
III. Guha ubushobozi uturere dutatu tw'ingenzi tw'inganda
1. Bateri nshya z'ingufu
Ifu ya CIVEN METAL ya 3.5μm (≥200MPa yo gukurura, ≥3% yo kurekura) yongera ubucucike bwa bateri ya 18650 ku kigero cya 15%. Ifu yashyizwemo imyobo yihariye (30–50% porosity) ifasha gukumira ikorwa rya lithium dendrite muri bateri za solid-state.
2. PCB zigezweho
Ifishi yoroshye (LP) ifite Rz ≤1.5μm igabanya igihombo cy'amajwi mu mbaho za milimetero 5G ku kigero cya 20%. Ifishi yoroshye (VLP) ifite iherezo ryasubiwemo (RTF) ishyigikira igipimo cy'amakuru cya 100Gb/s.
3. Ikoranabuhanga rihindagurika
Annealedurupapuro rw'umuringa rwa ED(Uburebure bwa ≥20%) ifite filime za PI ihangana n'ubugari burenga 200.000 (umurambararo wa mm 1), ikora nk' "igitereko cyoroshye" cy'ibikoresho byambarwa.
IV. CIVEN METAL: Umuyobozi mu guhindura ibintu mu icupa rya ED Copper Foil
Nk'ikirahure cy'amashanyarazi gituje kiri mu ifoto y'umuringa ya ED,ICYUMA CYA CIVENyubatse uburyo bwo gukora ibintu bugezweho kandi bugezweho:
Isomero rya Nano-Additive:Uruvange rw'inyongera rurenga 200 rwagenewe imbaraga nyinshi zo gukurura, kurekura no kudahungabana k'ubushyuhe.
Gukora foil iyobowe na AI:Ibipimo byakozwe neza na AI byemeza ko ubugari bwa ± 1.5% ari ukuri kandi ko ≤2I ari ubugari.
Ahantu ho kuvura ubuso:Imirongo 12 yihariye itanga amahitamo arenga 20 ashoboka (gukora neza, gusiga, gusiga irangi).
Udushya mu by'Ibiciro:Gukusanya imyanda mu buryo bw'ikoranabuhanga byongera ikoreshwa ry'umuringa utabitswe kugeza kuri 99.8%, bigabanya ikiguzi cya foil yabugenewe ho 10–15% munsi y'impuzandengo y'isoko.
Kuva ku kugenzura imiterere ya atome kugeza ku gutunganya imikorere ya macro-scale,urupapuro rw'umuringa rwa EDbigaragaza igihe gishya cy’ubuhanga mu by’ibikoresho. Uko impinduka ku isi yose igana ku gukoresha amashanyarazi n’ibikoresho by’ikoranabuhanga byihuta,ICYUMA CYA CIVENiyoboye itsinda ryayo mu buryo bwa "atomic precision + application innovation"—ishyira imbere inganda zigezweho z'Ubushinwa mu ruhererekane rw'agaciro ku isi.
Igihe cyo kohereza: Kamena-03-2025